IRF830 N-Channel Power MOSFET – TO-18 Metal Can
20.00 EGP
The IRF830 is a high-voltage N-Channel Power MOSFET packaged in a compact TO-18 metal can, designed for medium voltage and low to moderate current switching applications. It offers reliable performance with fast switching speeds and low gate drive requirements, making it ideal for high voltage analog switching, power control, and amplifier circuits.
Description
✅ Key Features:
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Drain-Source Voltage (Vds): 400V
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Continuous Drain Current (Id): 1.5A @ 25°C
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RDS(on): Typically around 1.7 Ohm
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Gate Threshold Voltage (Vgs(th)): 2.0 – 4.0V
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Total Power Dissipation (Pd): 1W
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Package Type: TO-18 Metal Can
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High Voltage Capability
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Fast Switching Speeds
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Low Gate Drive Voltage
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Compact and Durable Metal Can Package
🔧 Typical Applications:
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High voltage switching circuits
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Analog switching
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Low power amplification
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Signal processing
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Precision power control
📦 Technical Specifications:
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| Maximum Drain-Source Voltage (Vds) | 400V |
| Maximum Continuous Drain Current (Id) | 1.5A |
| Typical RDS(on) | ~1.7 Ohm |
| Gate Threshold Voltage (Vgs(th)) | 2.0 – 4.0V |
| Maximum Power Dissipation (Pd) | 1W |
| Package | TO-18 Metal Can |
⚠️ Note:
The IRF830 is suitable for low current, high voltage applications and requires proper thermal management for reliable operation.
The IRF830 is an excellent choice for engineers and hobbyists needing a high voltage MOSFET with fast switching in a compact metal package.
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