IRF3205 N-Channel Power MOSFET β TO-220 Package
In Stock
Categories: Transistors
Description
β Key Features:
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Drain-Source Voltage (Vds): 55V
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Continuous Drain Current (Id): 110A @ 25Β°C
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RDS(on): 0.008 Ohm (max)
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Gate Threshold Voltage (Vgs(th)): 2.0 β 4.0V
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Total Power Dissipation (Pd): 200W
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Package Type: TO-220
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Very Low On-Resistance for High Efficiency
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Fast Switching Performance
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High Input Capacitance
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Low Gate Drive Requirements
π§ Typical Applications:
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DC-DC Converters
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Automotive Electronics (e.g., ECU, lighting, motor drivers)
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UPS & Inverter Systems
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Battery Chargers & Power Supplies
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Electric Vehicles & E-bikes
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DIY Power Electronics Projects
π¦ Technical Specifications:
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| Vds (Max) | 55V |
| Id (Max) | 110A |
| Rds(on) (Max) | 0.008 Ohm |
| Vgs(th) | 2.0 β 4.0V |
| Package | TO-220 |
| Power Dissipation (Max) | 200W |
β οΈ Note:
For optimal thermal performance, proper heatsinking is required when operating at high loads.
