IRF730 N-Channel Power MOSFET – TO-39 Metal Can
15.00 EGP
The IRF730 is a high-voltage N-Channel Power MOSFET housed in a compact TO-39 metal can package, designed for medium voltage and low to moderate current switching applications. It delivers reliable switching performance with fast response times and low gate drive requirements, ideal for high voltage analog switching, power control, and amplifier circuits.
Description
✅ Key Features:
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Drain-Source Voltage (Vds): 400V
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Continuous Drain Current (Id): 1A @ 25°C
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RDS(on): Typically around 3.0 Ohm
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Gate Threshold Voltage (Vgs(th)): 2.0 – 4.0V
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Total Power Dissipation (Pd): 1W
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Package Type: TO-39 (Metal Can)
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High Voltage Capability
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Fast Switching Speeds
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Low Gate Drive Voltage
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Compact and Durable Metal Can Package
🔧 Typical Applications:
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High voltage switching circuits
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Analog switching
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Low power amplification
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Signal processing
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Precision power control
📦 Technical Specifications:
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| Maximum Drain-Source Voltage (Vds) | 400V |
| Maximum Continuous Drain Current (Id) | 1A |
| Typical RDS(on) | ~3.0 Ohm |
| Gate Threshold Voltage (Vgs(th)) | 2.0 – 4.0V |
| Maximum Power Dissipation (Pd) | 1W |
| Package | TO-39 Metal Can |
⚠️ Note:
The IRF730 is suitable for low current applications with high voltage requirements. Adequate thermal management should be considered for reliable operation.
The IRF730 offers a balance of high voltage tolerance and reliable switching performance in a compact metal package, suitable for both industrial and hobbyist applications.
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