IRF710 N-Channel Power MOSFET – TO-18 Metal
45.00 EGP
The IRF710 is a classic N-Channel Power MOSFET housed in a robust TO-18 metal can package, designed for medium voltage and low to moderate current switching applications. It offers reliable performance with good switching speed and low gate drive requirements, ideal for analog switching, power control, and amplifier circuits.
Description
✅ Key Features:
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Drain-Source Voltage (Vds): 400V
-
Continuous Drain Current (Id): 0.45A @ 25°C
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RDS(on): Typically around 2.0 Ohm
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Gate Threshold Voltage (Vgs(th)): 2.0 – 4.0V
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Total Power Dissipation (Pd): 0.8W
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Package Type: TO-18 (Metal Can)
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High Voltage Capability
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Low Gate Drive Voltage
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Robust Metal Can Package for Thermal Stability
🔧 Typical Applications:
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Analog switching circuits
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Low power amplification
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Signal processing
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High voltage switching
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Precision electronic control
📦 Technical Specifications:
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| Maximum Drain-Source Voltage (Vds) | 400V |
| Maximum Continuous Drain Current (Id) | 0.45A |
| Typical RDS(on) | ~2.0 Ohm |
| Gate Threshold Voltage (Vgs(th)) | 2.0 – 4.0V |
| Maximum Power Dissipation (Pd) | 0.8W |
| Package | TO-18 Metal Can |
⚠️ Note:
Due to its low power dissipation, the IRF710 is best suited for low current applications and should be used within specified limits for reliable operation.
The IRF710 is a reliable and classic MOSFET option for applications requiring high voltage tolerance with moderate switching speed and current capacity in a compact metal package.
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