IRF510 N-Channel Power MOSFET – TO-220
20.00 EGP
The IRF510 is a popular N-Channel Power MOSFET known for its low gate drive requirements, fast switching speed, and reliable performance. It is widely used in switching applications, RF amplification, power supplies, and DIY electronics projects. Its TO-220 package allows for easy mounting and efficient heat dissipation.
Description
✅ Key Features:
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Drain-Source Voltage (Vds): 100V
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Continuous Drain Current (Id): 5.6A @ 25°C
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RDS(on): 0.54 Ohm (max)
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Gate Threshold Voltage (Vgs(th)): 2.0 – 4.0V
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Total Power Dissipation (Pd): 43W
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Package Type: TO-220
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Fast Switching
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Low Gate Drive Requirements
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Reliable for Low-to-Medium Power Applications
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Suitable for Linear and Switching Modes
🔧 Typical Applications:
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RF Amplifiers (commonly in ham radio projects)
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Low-Voltage Switching Circuits
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DC-DC Converters
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Power Inverters
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DIY Power Electronics Projects
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Audio Amplifier Circuits
📦 Technical Specifications:
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| Vds (Max) | 100V |
| Id (Max) | 5.6A |
| Rds(on) (Max) | 0.54 Ohm |
| Vgs(th) | 2.0 – 4.0V |
| Package | TO-220 |
| Power Dissipation (Max) | 43W |
⚠️ Note:
Although the IRF510 can handle moderate current, it is recommended to use a heatsink for continuous high-power operation.
The IRF510 is a cost-effective and versatile MOSFET, ideal for both beginners and experienced engineers working on small to mid-range power control and switching tasks.






















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