IRF1010E – N-Channel Power MOSFET – TO-220
35.00 EGP
The IRF1010E is a high-performance N-Channel Power MOSFET designed for fast switching and high current applications. With its low on-resistance and high efficiency, it’s ideal for use in power management, motor control, DC-DC converters, and other switching applications.
Description
Key Features:
⚡ High Current Handling
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Continuous Drain Current up to 84A (at 25°C)
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Pulsed Drain Current: up to 320A
🔋 Low R<sub>DS(on)</sub>
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On-resistance as low as 0.010Ω, improving efficiency and minimizing heat generation
📐 Fast Switching Speed
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Ideal for high-speed circuits and switching power supplies
🧱 Standard TO-220 Package
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Easy to mount with good thermal performance
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Suitable for heatsink installation
📊 Specifications:
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| Package | TO-220 |
| V<sub>DS</sub> (Drain-Source Voltage) | 55V |
| I<sub>D</sub> (Continuous Drain Current) | 84A (at 25°C) |
| R<sub>DS(on)</sub> (Max) | 0.010Ω (at V<sub>GS</sub>=10V) |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 2.0 – 4.0V |
| Total Gate Charge | ~140nC |
| Max Power Dissipation | 200W |
Applications:
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DC motor drivers
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Power switching circuits
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Inverters and UPS systems
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DC-DC converters
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High-efficiency load switching
Note:
For optimal performance, proper heatsinking is recommended during high current operation.
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