30N120 IGBT Transistor – 1200V 60A High-Speed Switching
65.00 EGP
The 30N120 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for fast switching applications. With a collector-emitter voltage of 1200V and a continuous collector current of 60A, this device is ideal for use in motor drives, inverters, UPS systems, welding equipment, and other high-power switching circuits. It combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors.
Description
Key Features:
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✅ Type: IGBT (Insulated Gate Bipolar Transistor)
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✅ Collector-Emitter Voltage (Vce): 1200V
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✅ Continuous Collector Current (Ic): 60A
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✅ Pulsed Collector Current: 120A (peak)
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✅ Low Saturation Voltage (Vce(sat)): 2.0V @ 60A
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✅ Switching Speed: Fast switching with minimal power loss
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✅ Package Type: TO-247 for efficient heat dissipation
Applications:
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⚡ Motor Drives and Controllers
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🔋 Uninterruptible Power Supplies (UPS)
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🛠️ Welding Equipment
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📈 Switch-Mode Power Supplies (SMPS)
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🤖 Industrial Automation Systems
Specifications:
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Part Number: 30N120
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Type: N-Channel IGBT
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Vce (Collector-Emitter Voltage): 1200V
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Ic (Collector Current): 60A continuous, 120A pulsed
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Gate Threshold Voltage (Vge): ±20V max
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Power Dissipation: 250W
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Package: TO-247
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Operating Temperature Range: -55°C to +150°C
This transistor is perfect for engineers and hobbyists working on high-power electronic designs that require efficiency, reliability, and compactness.
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