30N120 IGBT Transistor – 1200V 60A High-Speed Switching
65.00 EGP
The 30N120 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for fast switching applications. With a collector-emitter voltage of 1200V and a continuous collector current of 60A, this device is ideal for use in motor drives, inverters, UPS systems, welding equipment, and other high-power switching circuits. It combines the simple gate-drive characteristics of MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors.
Description
Key Features:
-
✅ Type: IGBT (Insulated Gate Bipolar Transistor)
-
✅ Collector-Emitter Voltage (Vce): 1200V
-
✅ Continuous Collector Current (Ic): 60A
-
✅ Pulsed Collector Current: 120A (peak)
-
✅ Low Saturation Voltage (Vce(sat)): 2.0V @ 60A
-
✅ Switching Speed: Fast switching with minimal power loss
-
✅ Package Type: TO-247 for efficient heat dissipation
Applications:
-
⚡ Motor Drives and Controllers
-
🔋 Uninterruptible Power Supplies (UPS)
-
🛠️ Welding Equipment
-
📈 Switch-Mode Power Supplies (SMPS)
-
🤖 Industrial Automation Systems
Specifications:
-
Part Number: 30N120
-
Type: N-Channel IGBT
-
Vce (Collector-Emitter Voltage): 1200V
-
Ic (Collector Current): 60A continuous, 120A pulsed
-
Gate Threshold Voltage (Vge): ±20V max
-
Power Dissipation: 250W
-
Package: TO-247
-
Operating Temperature Range: -55°C to +150°C
This transistor is perfect for engineers and hobbyists working on high-power electronic designs that require efficiency, reliability, and compactness.
Reviews
There are no reviews yet.