FQA20N60 N-Channel MOSFET Transistor 600V, 20A TO-3PN
45.00 EGP
✔ High Efficiency – Low conduction losses for energy-saving designs.
✔ Durable Construction – TO-3PN package ensures superior heat dissipation.
✔ Wide Compatibility – Ideal for industrial, automotive, and power electronics.
✔ Reliable Performance – Avalanche-rated for rugged applications.
Description
Key Features:
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High Voltage Rating: 600V drain-to-source voltage (V<sub>DSS</sub>) for robust power handling.
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High Current Capability: Continuous drain current (I<sub>D</sub>) of 20A, suitable for high-power applications.
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Low On-Resistance: R<sub>DS(on)</sub) of 0.38Ω (max) ensures efficient power switching with minimal heat generation.
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Fast Switching Speed: Optimized for high-frequency switching applications.
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TO-3PN Package: Robust and durable through-hole package with excellent thermal performance.
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Avalanche Energy Rated: Enhanced reliability under inductive load conditions.
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Low Gate Charge (Q<sub>g</sub>): Reduces driving losses in high-frequency circuits.
Applications:
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Switching Power Supplies (SMPS)
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Motor Control & Drives
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Inverters & Converters
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Industrial & Automotive Electronics
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High-Voltage Power Regulation
Technical Specifications:
| Parameter | Value |
|---|---|
| Drain-Source Voltage (V<sub>DSS</sub>) | 600V |
| Continuous Drain Current (I<sub>D</sub>) | 20A |
| Pulsed Drain Current (I<sub>DM</sub>) | 80A |
| Gate-Source Voltage (V<sub>GS</sub>) | ±30V |
| On-Resistance (R<sub>DS(on)</sub>) | 0.38Ω (max) @ V<sub>GS</sub> = 10V |
| Power Dissipation (P<sub>D</sub>) | 200W |
| Operating Junction Temperature (T<sub>J</sub>) | -55°C to +150°C |
| Package Type | TO-3PN (Through-Hole Mounting) |
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