IRFP260N N-Channel Power MOSFET – 200V 50A 40mΩ TO-247
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Categories: Transistors
Overview
Description
IRFP260N N-Channel Power MOSFET
The IRFP260N N-Channel Power MOSFET is designed for high-performance applications. This device is perfect for engineers and hobbyists who need reliable power switching capabilities. With a drain-source voltage of 200V and a continuous drain current of 50A, it meets the demands of various electronic projects.
This powerful MOSFET operates efficiently under demanding conditions, making it suitable for a wide range of applications. Its ultra-low Rds(on) of 40mΩ ensures efficient operation, reducing heat generation and improving overall system performance. The IRFP260N N-Channel Power MOSFET excels in high-power DC-DC converters and motor control circuits, making it a versatile choice for renewable energy systems and industrial applications. Its robust design allows it to handle high voltages and currents, which is essential for applications requiring reliable and consistent performance.
Key Features
- Drain-Source Voltage (Vds): 200V
- Continuous Drain Current (Id): 50A at 25°C
- Rds(on): 0.04Ω max at Vgs = 10V
- Gate Threshold Voltage (Vgs(th)): 2.0V – 4.0V
- Fast Switching Speed for enhanced efficiency
- TO-247 package for excellent heat dissipation
Use Cases
This MOSFET is widely used in high-power applications such as motor drivers, renewable energy inverters, and DC-DC converters. It is a reliable choice for both commercial and DIY projects. Typical buyers include electrical engineers, hobbyists, and manufacturers looking for dependable components to enhance their designs. Whether you are working on a solar power project or developing a new motor control system, the IRFP260N N-Channel Power MOSFET is an excellent choice for ensuring optimal performance and reliability.
Don’t miss out on the benefits of the IRFP260N N-Channel Power MOSFET. Enhance your projects with this efficient component. Order now and experience superior performance!
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IRFP260N N-Channel Power MOSFET – 200V 50A 40mΩ TO-247
60.00 EGP