IRFB4110 MOSFET Transistor N-Channel 100V 180A TO-220

The IRFB4110 N-Channel Power MOSFET is a high-current power switching transistor from the StrongIRFET™ family, designed for power electronics applications that require low conduction losses, high current capability, and reliable switching performance. It is rated for a maximum drain-to-source voltage of 100V and a continuous drain current of up to 180A at 25°C under the silicon-limited rating.

The device features a low RDS(on) of up to 4.5mΩ at VGS = 10V, helping reduce conduction losses and heat generation when the MOSFET is properly driven. Its high-current capability makes it suitable for applications involving high-power DC switching, motor control, battery systems, inverters, and DC-DC conversion.

The IRFB4110 is housed in the widely used TO-220 package, providing a through-hole mounting solution suitable for power electronic circuits and heatsink installation. The device has a maximum power dissipation rating of 370W under specified thermal conditions, although actual operating current and power depend heavily on thermal management, PCB design, switching conditions, and the Safe Operating Area.

The MOSFET has a maximum gate-to-source voltage of ±20V and an operating junction temperature range extending from -55°C to 175°C. Its gate threshold voltage is specified in the range of 2V to 4V, but the low RDS(on) specification is given at 10V gate drive, so the threshold voltage should not be treated as the voltage required for full enhancement.

The IRFB4110 is particularly suited to low-frequency power switching applications, with Infineon identifying applications including SMPS, UPS, solar power inverters, DC motor drives, and battery-powered systems. Its high-current rating and low on-state resistance make it a practical choice for demanding power conversion and switching designs.

Features

• N-channel power MOSFET

• 100V maximum drain-to-source voltage

• Up to 180A continuous drain current at 25°C

• Low RDS(on) for reduced conduction losses

• 4.5mΩ maximum RDS(on) at VGS = 10V

• TO-220 through-hole package

• High-current handling capability

• Maximum power dissipation of 370W under specified conditions

• ±20V maximum gate-to-source voltage

• Junction temperature up to 175°C

• Designed for low-frequency power switching

• StrongIRFET™ technology

• Suitable for DC motors, inverters, battery systems, and DC-DC converters

Specifications

• Part Number: IRFB4110

• Product Type: N-Channel Power MOSFET

• Technology: StrongIRFET™

• Drain-to-Source Voltage (VDSS): 100V

• Continuous Drain Current (ID): 180A @ 25°C

• Continuous Drain Current @ 100°C: 120A

• RDS(on): 3.7mΩ typical / 4.5mΩ maximum

• Test Gate Voltage for RDS(on): 10V

• Gate-to-Source Voltage (VGS): ±20V

• Gate Threshold Voltage: 2–4V

• Total Gate Charge (Qg): 150nC typical

• Gate-Drain Charge (Qgd): 43nC

• Maximum Power Dissipation: 370W

• Junction Temperature: -55°C to +175°C

• Thermal Resistance, Junction-to-Case: 0.4K/W

• Package: TO-220

• Mounting: Through-Hole (THT)

Applications

• DC motor drives

• Battery-powered systems

• DC-DC converters

• Switching power supplies (SMPS)

• Uninterruptible power supplies (UPS)

• Solar power inverters

• Power inverter circuits

• High-current DC switching

• Power management systems

• Industrial power electronics

• High-current switching applications