IRF830 N-Channel Power MOSFET – TO-18 Metal Can
In Stock
Categories: Transistors
Description
✅ Key Features:
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Drain-Source Voltage (Vds): 400V
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Continuous Drain Current (Id): 1.5A @ 25°C
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RDS(on): Typically around 1.7 Ohm
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Gate Threshold Voltage (Vgs(th)): 2.0 – 4.0V
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Total Power Dissipation (Pd): 1W
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Package Type: TO-18 Metal Can
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High Voltage Capability
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Fast Switching Speeds
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Low Gate Drive Voltage
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Compact and Durable Metal Can Package
🔧 Typical Applications:
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High voltage switching circuits
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Analog switching
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Low power amplification
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Signal processing
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Precision power control
📦 Technical Specifications:
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| Maximum Drain-Source Voltage (Vds) | 400V |
| Maximum Continuous Drain Current (Id) | 1.5A |
| Typical RDS(on) | ~1.7 Ohm |
| Gate Threshold Voltage (Vgs(th)) | 2.0 – 4.0V |
| Maximum Power Dissipation (Pd) | 1W |
| Package | TO-18 Metal Can |
⚠️ Note:
The IRF830 is suitable for low current, high voltage applications and requires proper thermal management for reliable operation.
The IRF830 is an excellent choice for engineers and hobbyists needing a high voltage MOSFET with fast switching in a compact metal package.
