IRF730 N-Channel Power MOSFET – TO-39 Metal Can
In Stock
Categories: Transistors
Description
✅ Key Features:
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Drain-Source Voltage (Vds): 400V
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Continuous Drain Current (Id): 1A @ 25°C
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RDS(on): Typically around 3.0 Ohm
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Gate Threshold Voltage (Vgs(th)): 2.0 – 4.0V
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Total Power Dissipation (Pd): 1W
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Package Type: TO-39 (Metal Can)
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High Voltage Capability
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Fast Switching Speeds
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Low Gate Drive Voltage
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Compact and Durable Metal Can Package
🔧 Typical Applications:
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High voltage switching circuits
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Analog switching
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Low power amplification
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Signal processing
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Precision power control
📦 Technical Specifications:
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| Maximum Drain-Source Voltage (Vds) | 400V |
| Maximum Continuous Drain Current (Id) | 1A |
| Typical RDS(on) | ~3.0 Ohm |
| Gate Threshold Voltage (Vgs(th)) | 2.0 – 4.0V |
| Maximum Power Dissipation (Pd) | 1W |
| Package | TO-39 Metal Can |
⚠️ Note:
The IRF730 is suitable for low current applications with high voltage requirements. Adequate thermal management should be considered for reliable operation.
The IRF730 offers a balance of high voltage tolerance and reliable switching performance in a compact metal package, suitable for both industrial and hobbyist applications.