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IRF730 N-Channel Power MOSFET – TO-39 Metal Can - Electra
IRF730 N-Channel Power MOSFET – TO-39 Metal Can

IRF730 N-Channel Power MOSFET – TO-39 Metal Can

Electra Store SKU: CM-22024
15.00 EGP

In Stock

1

Categories: Transistors

Description

Key Features:

  • Drain-Source Voltage (Vds): 400V

  • Continuous Drain Current (Id): 1A @ 25°C

  • RDS(on): Typically around 3.0 Ohm

  • Gate Threshold Voltage (Vgs(th)): 2.0 – 4.0V

  • Total Power Dissipation (Pd): 1W

  • Package Type: TO-39 (Metal Can)

  • High Voltage Capability

  • Fast Switching Speeds

  • Low Gate Drive Voltage

  • Compact and Durable Metal Can Package


🔧 Typical Applications:

  • High voltage switching circuits

  • Analog switching

  • Low power amplification

  • Signal processing

  • Precision power control


📦 Technical Specifications:

Parameter Value
Type N-Channel MOSFET
Maximum Drain-Source Voltage (Vds) 400V
Maximum Continuous Drain Current (Id) 1A
Typical RDS(on) ~3.0 Ohm
Gate Threshold Voltage (Vgs(th)) 2.0 – 4.0V
Maximum Power Dissipation (Pd) 1W
Package TO-39 Metal Can

⚠️ Note:

The IRF730 is suitable for low current applications with high voltage requirements. Adequate thermal management should be considered for reliable operation.


The IRF730 offers a balance of high voltage tolerance and reliable switching performance in a compact metal package, suitable for both industrial and hobbyist applications.