✅ Key Features:

• Drain-Source Voltage (Vds): 400V

• Continuous Drain Current (Id): 0.45A @ 25°C

• RDS(on): Typically around 2.0 Ohm

• Gate Threshold Voltage (Vgs(th)): 2.0 – 4.0V

• Total Power Dissipation (Pd): 0.8W

• Package Type: TO-18 (Metal Can)

• High Voltage Capability

• Low Gate Drive Voltage

• Robust Metal Can Package for Thermal Stability

🔧 Typical Applications:

• Analog switching circuits

• Low power amplification

• Signal processing

• High voltage switching

• Precision electronic control

📦 Technical Specifications:

⚠️ Note:

Due to its low power dissipation, the IRF710 is best suited for low current applications and should be used within specified limits for reliable operation.

The IRF710 is a reliable and classic MOSFET option for applications requiring high voltage tolerance with moderate switching speed and current capacity in a compact metal package.