IRF622 N-Channel Power MOSFET – TO-220
In Stock
Categories: Transistors
Description
✅ Key Features:
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Drain-Source Voltage (Vds): 200V
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Continuous Drain Current (Id): 6A @ 25°C
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RDS(on): Typically around 1.3 Ohm
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Gate Threshold Voltage (Vgs(th)): 2.0 – 4.0V
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Total Power Dissipation (Pd): 50W
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Package Type: TO-220
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Fast Switching Speed
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Low Gate Drive Voltage
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Good Thermal Performance
🔧 Typical Applications:
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Power supply switching
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Motor drivers and controllers
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Audio amplifier circuits
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Load switching
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General purpose electronics projects
📦 Technical Specifications:
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| Maximum Vds | 200V |
| Maximum Id | 6A |
| Rds(on) | ~1.3 Ohm |
| Gate Threshold Voltage | 2.0 – 4.0V |
| Package | TO-220 |
| Power Dissipation | 50W |
⚠️ Note:
Proper heatsinking is recommended for sustained high-power operation.
The IRF622 is an efficient and cost-effective MOSFET choice for a wide range of switching and amplification applications in both industrial and hobbyist projects.
