IRF510 N-Channel Power MOSFET – TO-220
In Stock
Categories: Transistors
Description
✅ Key Features:
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Drain-Source Voltage (Vds): 100V
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Continuous Drain Current (Id): 5.6A @ 25°C
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RDS(on): 0.54 Ohm (max)
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Gate Threshold Voltage (Vgs(th)): 2.0 – 4.0V
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Total Power Dissipation (Pd): 43W
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Package Type: TO-220
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Fast Switching
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Low Gate Drive Requirements
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Reliable for Low-to-Medium Power Applications
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Suitable for Linear and Switching Modes
🔧 Typical Applications:
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RF Amplifiers (commonly in ham radio projects)
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Low-Voltage Switching Circuits
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DC-DC Converters
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Power Inverters
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DIY Power Electronics Projects
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Audio Amplifier Circuits
📦 Technical Specifications:
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| Vds (Max) | 100V |
| Id (Max) | 5.6A |
| Rds(on) (Max) | 0.54 Ohm |
| Vgs(th) | 2.0 – 4.0V |
| Package | TO-220 |
| Power Dissipation (Max) | 43W |
⚠️ Note:
Although the IRF510 can handle moderate current, it is recommended to use a heatsink for continuous high-power operation.
The IRF510 is a cost-effective and versatile MOSFET, ideal for both beginners and experienced engineers working on small to mid-range power control and switching tasks.
