IRF640 N-Channel Power MOSFET – TO-220
18.00 EGP
The IRF640 is a high-voltage, medium-current N-Channel Power MOSFET designed for efficient switching and power amplification applications. With a maximum drain-source voltage of 200V and a continuous drain current of 18A, it offers robust performance for power supplies, motor controllers, and various industrial electronics. Its TO-220 package ensures excellent thermal management and ease of installation.
Description
✅ Key Features:
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Drain-Source Voltage (Vds): 200V
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Continuous Drain Current (Id): 18A @ 25°C
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RDS(on): 0.18 Ohm (max)
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Gate Threshold Voltage (Vgs(th)): 2.0 – 4.0V
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Power Dissipation (Pd): 150W
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Package: TO-220
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Fast Switching Speeds
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Low Gate Drive Voltage
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Durable and Reliable Construction
🔧 Typical Applications:
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Switching power supplies (SMPS)
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Motor drivers and speed controllers
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Audio amplifiers
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Load switching and control
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Industrial power management
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DIY electronics and hobby projects
📦 Technical Specifications:
| Parameter | Value |
|---|---|
| Maximum Drain-Source Voltage (Vds) | 200V |
| Maximum Continuous Drain Current (Id) | 18A |
| Maximum RDS(on) | 0.18 Ohm |
| Gate Threshold Voltage (Vgs(th)) | 2.0 – 4.0V |
| Maximum Power Dissipation (Pd) | 150W |
| Package | TO-220 |
⚠️ Note:
Use adequate heatsinking during high-power operation to ensure optimal performance and prevent overheating.
The IRF640 is an excellent choice for engineers and hobbyists looking for a versatile, high-voltage MOSFET suitable for a wide range of switching and amplification tasks.
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