FQPF20N60C N-Channel MOSFET Transistor 600V, 20A TO-220F
25.00 EGP
✔ Energy Efficient – Low R<sub>DS(on)</sub> minimizes conduction losses.
✔ Safe & Isolated – TO-220F package prevents short circuits when mounted on heatsinks.
✔ Fast & Reliable Switching – Ideal for high-frequency power conversion.
✔ Rugged Design – Avalanche-rated for robust performance in harsh conditions.
Description
FQPF20N60C N-Channel MOSFET Transistor 600V, 20A TO-220F
Key Features:
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High Voltage Rating: 600V drain-to-source voltage (V<sub>DSS</sub>) for reliable power switching.
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High Current Capacity: Continuous drain current (I<sub>D</sub>) of 20A, suitable for demanding applications.
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Low On-Resistance: R<sub>DS(on)</sub> of 0.28Ω (max) @ V<sub>GS</sub> = 10V, ensuring efficient power handling with minimal losses.
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Fast Switching Performance: Optimized for high-frequency applications.
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TO-220F Package: Insulated (fully molded) version of TO-220, providing electrical isolation and easy mounting.
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Avalanche Energy Rated: Enhanced durability in inductive load conditions.
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Low Gate Charge (Q<sub>g</sub>): Reduces drive power requirements, improving efficiency.
Applications:
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Switched-Mode Power Supplies (SMPS)
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Motor Drives & Inverters
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AC/DC & DC/DC Converters
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Industrial & Automotive Electronics
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Lighting Ballasts & UPS Systems
Technical Specifications:
| Parameter | Value |
|---|---|
| Drain-Source Voltage (V<sub>DSS</sub>) | 600V |
| Continuous Drain Current (I<sub>D</sub>) | 20A |
| Pulsed Drain Current (I<sub>DM</sub>) | 80A |
| Gate-Source Voltage (V<sub>GS</sub>) | ±30V |
| On-Resistance (R<sub>DS(on)</sub>) | 0.28Ω (max) @ V<sub>GS</sub> = 10V |
| Power Dissipation (P<sub>D</sub>) | 125W |
| Operating Junction Temperature (T<sub>J</sub>) | -55°C to +150°C |
| Package Type | TO-220F (Insulated, Fully Molded) |
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