BDX53 NPN Epitaxial Silicon Transistor
25.00 EGP
BDX53
Description
This transistor is designed for use in power amplifier and switching applications. It has a maximum collector current of 8A and a maximum collector-emitter voltage of 100V. The BDX53 also has a low saturation voltage, which makes it ideal for use in high-efficiency circuits. Additionally, it has a high current gain and a low base drive requirement, which makes it easy to use in a variety of applications. Overall, the BDX53 is a reliable and versatile transistor that can be used in a wide range of electronic devices.
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