BDW93 Bipolar Transistor

25.00 EGP

BDW93

SKU: CM-21903 Category: Tags: ,

Description

Characteristics of BDW93 Transistor

  • Type: NPN
  • Collector-Emitter Voltage, max: 45 V
  • Collector-Base Voltage, max: 45 V
  • Collector Current − Continuous, max: 12 A
  • Collector Dissipation: 80 W
  • DC Current Gain (hfe): 750 to 2000
  • Operating and Storage Junction Temperature Range: -65 to 150 °C
  • Package: TO-220

BDW93 Key Features

  • Collector Current -IC= 12A
  • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDW93
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation
  • Type Designator: BDW93C
  • Material of Transistor: Si
  • Polarity: NPN
  • Package: TO220

Application

  • Hammer Drivers
  • Audio Amplifier

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