BDW93 Bipolar Transistor
25.00 EGP
BDW93
Description
Characteristics of BDW93 Transistor
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Type: NPN
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Collector-Emitter Voltage, max: 45 V
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Collector-Base Voltage, max: 45 V
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Collector Current − Continuous, max: 12 A
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Collector Dissipation: 80 W
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DC Current Gain (hfe): 750 to 2000
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Operating and Storage Junction Temperature Range: -65 to 150 °C
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Package: TO-220
BDW93 Key Features
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Collector Current -IC= 12A
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Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BDW93
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Minimum Lot-to-Lot variations for robust device performance and reliable operation
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Type Designator: BDW93C
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Material of Transistor: Si
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Polarity: NPN
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Package: TO220
Application
- Hammer Drivers
- Audio Amplifier
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